Selected teams are Applied Materials, Inc., Arizona State University, BRIDG, HRL Laboratories, Intel Federal, North Carolina State University, Northrop Grumman Space Systems, Northrop Grumman Mission Systems, PseudolithIC, Raytheon Technologies, and Teledyne Scientific & Imaging.

Development of 3DHI technologies creates the ability to stack separately manufactured components – chips or wafers originating in different facilities, containing different semiconductors and materials – within a single package. In realizing 3DHI microelectronics that incorporate diverse materials beyond silicon, NGMM focuses on revolutionary improvements in functionality and performance. Moreover, these advances provide an opportunity for U.S. leadership in cutting-edge microelectronics of the future.

NGMM is a cornerstone of ERI 2.0, a DARPA initiative to ensure domestic leadership in cross-functional, future-focused microelectronics research, development, and manufacturing.

The Electronics Resurgence Initiative (ERI), DARPA's response to national-level microelectronics concerns, is designed to ensure U.S. leadership in cross-functional, next-generation microelectronics research, development, and manufacturing.